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The HBTs used in this study were grown by OMVPE. The base was carbon doped to 3??1019 cm??3 with a thickness of 500A. Several 3????10?? HBTs were biased at Ic=2,4 and lOmA (VCE=2V) and maintained at TA=125??C. Based on 1000 hours of operation at 125??C , Ic=2mA is safe, 4mA is marginal and 10mA is fatal.
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