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An analysis and modeling of the low frequency noise characteristics of deeply submicronic CMOS devices is conducted. It is shown that the scaling down of the gate area leads to dramatic change of the noise nature and to a substantial increase of the noise level dispersion. A generic modelling of the noise amplitude and spectrum is worked out as a function of geometry and biases, allowing a good representation...
This paper reports on 2D Monte Carlo simulation of two logic inverters. A CML gate is simulated in commutation regime to study the evolution of the propagation delay as a function of the circuit time constants. Furthermore the behaviour of a CMOS inverter under radiation is analyzed.
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