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Electrothermal simulators are efficient tools to study ElectroStatic Discharge (ESD) problems. We use the numerical 2D simulator TMA-MEDICI [1] to simulate electrothermal problems. We propose here an analysis of thermal breakdown occurrence observed on a PIN diode under reverse ESD pulse. Experimental studies and analytical models have already been proposed [2,3,4]. Nevertheless, simulations coupled...
With the purpose of determining material parameters of MOS-technology dedicated Shockley-Haynes-structures and MOS varactors, among others, have been integrated on a single chip. By use of a specially developed electronic unit an improved performance of the Shockley-Haynes-Experiment has been achieved. In this paper from the comparison of measurements and analytic simulations the hole mobility ??p...
This paper reports on the use of Pd-Ge-Ag Au for ohmic contacts to InAlAs/InGaAs High Electron Mobility Transistors (HEMTs). After annealing onto a hot plate, specific contact resistance of 1 10-6??cm2 and 5 10-7 ??cm2 for structures having respectively a 5 nm undoped and a 50 nm n+ doped InGaAs cap layer were obtained in a wide temperature range (380??C-470??C). No thermal degradation was observed...
Dielectric reliability is of critical importance in the manufacture of double polysilicon floating gate EEPROM devices. This paper reports the effect of different polysilicon oxidation and doping conditions on the properties of both the inter-poly oxide and the tunnel oxide. The paper shows that increasing the polysilicon oxidation temperature results in an improvement in inter-poly oxide breakdown...
The analysis of high frequency parameters of pseudomorphic HEMTs (PM-HEMT) at cryogenic temperatures and different gate lengths 0.1??m to 0.7??m, compared to existing modeling data, points out the improvement of average carrier velocity transport at low temperatures, the larger relative importance of certain parasitic effects (lateral diffusion under the gate, fringe effects, electrostatic capacitances)...
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