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The diffusion and activation of boron at high concentrations are key problems in designing ultra-shallow P+ junctions. In this paper, the behavior of boron diffusion after high dose ion implantation is analysed using the theory of nucleation. For the first time, a dynamic nucleation formulation is included in a complete point defect diffusion model together with ion implantation damage. This allows...
We have compared in terms of drivability and reliability different LDD structures for 0.35 μm NMOS transistor. The sensitivities of device performance and hot carrier degradation to the LDD implant tilt angle and dose were measured and evaluated. The results indicate that LArge-Tilt-angle Implanted Drain (LATID) with high dose provides a well-optimised device.
The pwell implant and anneal for a 0.4μm CMOS process have been optimized for a self-aligned twin well without channel stop implant to yield improved n+ to nwell spacing, reduce the poly field NMOS leakage and make the process less sensitive to latch-up.
A comparison is made between measured and simulated boron base doping profiles in Si/Si1-x Gex heterojunction bipolar transistors fabricated with an n+ emitter contact implant. The non-equilibrium, supersaturation of defects arising from the implant is represented in the simulations by a point defect distribution obtained from Monte Carlo simulation. An enhancement of the boron diffusivity is predicted...
The design of a 6 transistor SRAM cell with 0.5 μm layout rules requires an N+ to P+ spacing across the well edge in the order of 2 μm. Punchthrough and latchup sensitivity are the major factors which limit the reduction of this spacing. The process reported in this paper solves the problem of the p-type implant with its lateral diffusion at the same time the number of masking steps of the generation...
This study reports the gate-voltage dependence of Large-Angle-Tilt Implanted Drain (LATID) and standard Lightly Doped Drain (LDD) technologies of 0.5??m effective channel-length suitable for 5V operation. It is found that although the strong lateral field reduction improve the LATID performance, acceptor-like oxide traps are revealed in the whole stressing gate-voltage range, a large spread of oxide-traps...
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