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BF implantation into polysilicon and its subsequent rapid thermal diffusion into single crystal silicon is investigated for the fabrication of shallow pnp polysilicon emitter bipolar transistors. The use of RTA, instead of furnace annealing, is shown to give shallower junctions, with a higher doping concentration at the polysilicon/silicon interface. The effect of fluorine, which is introduced into...
The growth of silicon dioxide in pure N2O has been evaluated by using conventional furnace oxidation method. The results have pointed out that neither lightly-doped nor heavily-doped substrates exhibit any self-limited growth behavior. The growth kinetics can be described by the linear-parabolic model. Enhanced oxidation has also been observed on heavily arsenic doped substrates in the pure N2O ambient.
The trend of increasing the wafer size towards 200-mm is driven by the reduction of the high-volume production cost of large circuits. At the same time, the compatibility with deep submicron processes should be preserved. This dictates tight specifications on the bare substrate itself (e.g. flatness) and on the process equipments, some of which being discussed here. Moreover the increased size and...
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