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An analysis of current situation in silicon carbide R&D shows that it is most real to fabricate SiC IMPATT diode on an epitaxial pn structure grown on the (0001)Si face of 6H-SiC crystal. The operating frequency of this diode will be in the range 90-250 GHz. We calculated numericallydynamic characteristics of the SiC IMPATT diode for pulse mode of operation at the frequency 140 GHz. Results show...
The design, fabrication and characterization of a high performance 0.15 μm n-channel and p-channel MOS devices for room temperature operation are described. The design features 5 nm gate oxide, shallow source-drain junction extensions, thin self-aligned titanium silicides, and highly doped wells with low impurity channels for providing low threshold voltages and good turn-off characteristics. A reduced...
A silicon bipolar technology, which uses Selective Epitaxial Growth (SEG) for the active base and collector regions is described. Key features of the SEG transistor configuration are a quasi self-aligned base/collector structure and an epitaxial base process, which has been integrated into a self-aligned double-poly emitter/base configuration. The high speed capability of the SEG transistor concept...
A new type of precision thinned bonded silicon wafer is evaluated for thin film CMOS/SOI applications. SOI wafers with silicon film thickness variations of less than ??2.5 nm are available with choice of substrate doping and buried oxide thickness. CMOS devices fabricated on these wafers have the same carrier mobilities as comparable bulk silicon MOSFETs.
Two types of HEMT transistors with 0.2 μm gatelength have been fabricated: pseudomorphic (PM) on GaAs and lattice matched (LM) on InP. An extensive study of the DC and HF-characteristics shows the higher potential of the InP-based devices: extrinsic fT-values up to 141 GHz were obtained. The monolithic integration of the InP LM HEMT's is illustrated by the performance of a coplanar distributed amplifier.
Two processes based on the bulk machining of silicon, combined to anodic bonding of silicon to glass, where developped for the fabrication of electrostatic microactuators. An original approach was used for the realization of a submillimetric scale, dual stator axial field, rotary electrostatic motor, for which electrochemical etching of silicon with etch stop on junction is the key operation. The...
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