The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Low frequency noise and excess currents in InP and GaAs-based double barrier(DB) resonant tunneling diodes (RTDs) are described. Correlations between noise measurements and static characteristics of the DB RTDs, and a theoretical explanation for both noise and d.c. characteristics based on trap-assisted tunneling (TAT) is presented. It is shown that devices with low peak-to-valley current ratios (PVCRs)...
The effect of fluorination on the bulk oxide traps in poly-Si/SiO2/Si capacitors was studied using charge injection techniques. A substantial reduction of the density of both electron and hole traps was observed after fluorine implantation into the gate. The process of trap elimination was found to be dependent on the presence of hydrogen in the oxide, suggesting the involvement of some mobile species,...
Physical aspects involved in transistor aging are reviewed with emphasis on the special behavior of mesoscopic devices as compared to conventional short-channel MOSFETs. Major differences are related to carrier-heating, defect localization and characterization techniques.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.