The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, a Ga0.51In0.49P/GaAs insulated-gate inverted-structure HEMT (I2HEMT) was fabricated and investigated. It showed negligible deep-trap effect at low temperatures due to the low DX centers in GaInP. High drain-to-source breakdown voltage (10V) was obtained by using the GaInP insulated layer.
Dielectric reliability is of critical importance in the manufacture of double polysilicon floating gate EEPROM devices. This paper reports the effect of different polysilicon oxidation and doping conditions on the properties of both the inter-poly oxide and the tunnel oxide. The paper shows that increasing the polysilicon oxidation temperature results in an improvement in inter-poly oxide breakdown...
This paper investigates isolation and wiring in a typical 700-1000-V, junction isolated (JI), high voltage integrated circuit (HVIC), process. It proposes a novel technique for running 1000-V wires over the isolation to other parts of the chip, without causing breakdown of the isolation itself or inducing unwanted parasitics.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.