The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper describes a methodology by which accurate MOSFET model parameter sets, covering statistical IC manufacturing fluctuations, can be generated. This procedure employs multivariate statistics to convert correlated device model parameters into a much smaller set of independent manufacturing process-related factors. Worst-case model parameter sets are constructed from the derived factors. Comparisons...
This paper describes a model for extraction of oxide thickness and surface concentrations from HF-CV measurements. The accuracy of the model is evaluated by comparing the obtained results with values calculated by solving the Poisson and Gauss equations for a capacitor. It is shown that the model is suited for accurate extractions for layers with concentration between 1.1019 and 1.1020 cm-3.
With the purpose of determining material parameters of MOS-technology dedicated Shockley-Haynes-structures and MOS varactors, among others, have been integrated on a single chip. By use of a specially developed electronic unit an improved performance of the Shockley-Haynes-Experiment has been achieved. In this paper from the comparison of measurements and analytic simulations the hole mobility ??p...
Capacitance-voltage characteristics of the Ti/W-SiO2-Si(p) structures with different oxide thicknesses have been measured at temperatures in the range from 20?? C to 550??C. Analysis of the results shows that the SiO2 relative dielectric permittivity increases with the temperature while the oxide effective charge density Qeff decreases and becomes negative at temperatures greater than 300??C.
A new cryogenic on-chip microwave coplanar probe station is described which extends the frequency range of low temperature high accuracy on-chip measurements in the millimeter range and down to 40K. Measurements on ultrasubmicrometer gatelength HEMTs and high Tc superconductor transmission lines are presented.
The performance of a chemical gas sensor based on polycristallyne tin oxide films is strongly related to their structure, thickness and doping. In previous works we have studied the influence of the thickness on the detection by impedance spectroscopy analysis [1,2]. In the present work we have focused our attention in designing and modelizing a sensor for detection of NOx for environmental applications...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.