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This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si1-xGex/Si p+-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface...
A new type of precision thinned bonded silicon wafer is evaluated for thin film CMOS/SOI applications. SOI wafers with silicon film thickness variations of less than ??2.5 nm are available with choice of substrate doping and buried oxide thickness. CMOS devices fabricated on these wafers have the same carrier mobilities as comparable bulk silicon MOSFETs.
This study characterizes the SiO2 etching by two gases C2F6 and CF4, in an experimental high-density reactor. The effect of some experimental parameter variations on the etching rate and F and CF2 radical concentration, has been studied and correlated to the self-induced voltage and the substrate temperature.
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