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An advanced isolation method, Framed Poly-Buffer LOCOS (FPBLOCOS), for a 0.35 ??m CMOS technology is presented in this paper. The bird's beak length of the FPBLOCOS isolation technique is smaller compared to the Poly Buffer LOCOS isolation scheme. Excellent thin gate oxide quality and low junction diode leakage are demonstrated. The feasibility of the isolation module was demonstrated in a 0.35 ??m...
Experimental data and theoretical analysis of temperature cross-over effect in I-V characteristics of MOSFET and bipolar devices in a regime governed by band-to-band tunneling and avalanche generation are reported for the first time. The two mechanisms can be discriminated by their temperature dependence. The predictions of a proposed model are in excellent agreement with experiment using well-established...
The leakage current of Schottky contacts on the heterosystem InAlAs/InGaAs is investigated by use of an one dimensional model which considers a tunneling component and a current caused by thermionic emission contributing to the leakage current. A detailed analysis of the influence of the layer structure and other parameters on the leakage current with regard to heterostructure FET (HFET) applications...
The early stages of diffusion into crystalline Si from 170 nm thick CoSi2 layers doped with As and B have been studied by a high resolution delineation technique of dopant profiles. The junction shape follows the silicide-silicon interface for B while it is deeper near the grain boundary for As. The different behaviour is related to the different diffusion mechanisms of As and B in the silicide layer...
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