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Reliability measurements have been carried out on n-channel delta-doped MOSFETs incorporating an anodic gate oxide. The threshold voltage shifts induced in these devices when stressed for up to 105 seconds is compared with that observed for control devices fabricated on plain wafers. The delta-doped devices show a reduced threshold voltage shift indicating a reduction in oxide damage for these devices...
Experimental data and theoretical analysis of temperature cross-over effect in I-V characteristics of MOSFET and bipolar devices in a regime governed by band-to-band tunneling and avalanche generation are reported for the first time. The two mechanisms can be discriminated by their temperature dependence. The predictions of a proposed model are in excellent agreement with experiment using well-established...
We present a compact experimental technique for the extraction of all parasitic series resistances of bipolar transistor, which requires only few DC measurements and no special device structure. The method is based upon the fact that, due to impact ionization within the base-collector space-charge region, at a certain collector-base voltage the base current and therefore the voltage drop on the parasitic...
We report for the first time an analysis of impact ionization phenomena occurring in a complementary charge injection transistor. We observed the real-space transfer of minority carriers generated by impact ionization and collected by the collector contact. From the measured collector current and by means of a simple model, we estimated the electron impact ionization coefficient of In0.53Ga0.47As...
In SOI devices heat evacuation is limited by a buried oxide layer. The consequence is the well known Self Heating (SH) phenomenon [1] [2] [3]. We have in depth analysed the corresponding thermal effects on static and dynamic modes and the implications for the device operation.
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