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A high sensitivity system has been set-up for the measurement of inter-nodal C-V characteristics in MOSFET devices at low frequencies (20 Hz to 100 kHz). Its application to the measurement of gate to source capacitance of polysilicon thin film transistors (poly-Si TFTs) reveals for the first time the presence of a peak exceeding the oxide capacitance at very low frequencies. This and other experimentally...
Several 1-D analytical models of the potential distribution across the nMOS/GAA device are proposed and compared. The most accurate result is achieved solving the Poisson equation accounting for both the depletion charges and an approximation of the electron density at the surface of the film. The derived analytical expressions of the drain current and the threshold voltage are in good agreement with...
An analytic model has been developed for nanoelectronic device analysis. Application of the model to determine the channel length limited by the short channel effect is presented. The analysis indicates for Lch ≪ 150nm an alternate source-drain junction design is required for room and low temperature operation.
A new class of Frame-Transfer CCD image sensors is presented which uses both electrons and holes as information carriers and has a novel cross anti-blooming structure for overexposure protection. The device consists of alternate columns of p-and n-channel CCD's shown in Fig. 1 which forms two separately operating p-and n-type imagers. This concept uses the n channel as a channel isolator for the p-channel...
Using two-and three dimensional analytical and numerical models, scaling limits derived from small-geometry degradation of subthreshold characteristics are compared for six different FET structures in bulk Si, SOI and GaAs technologies. For Si devices, the low impurity channel MOSFET can be scaled down to Lmin= 0.045??m and the dual gate SOI MOSFET to Lmin= 0.028??m. The GaAs MESFET can be scaled...
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