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Low frequency noise and excess currents in InP and GaAs-based double barrier(DB) resonant tunneling diodes (RTDs) are described. Correlations between noise measurements and static characteristics of the DB RTDs, and a theoretical explanation for both noise and d.c. characteristics based on trap-assisted tunneling (TAT) is presented. It is shown that devices with low peak-to-valley current ratios (PVCRs)...
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