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We have used a new selective CVD TiSi2 in an advanced CMOS process. Subhalf-micron transistors have been characterised, with results equivalent to devices made with more conventional salicide. Ring oscillators with typical gate a delay times have been fabricated. Finally, fully functional 16K SRAMS and 350 KT ASICs have been fabricated, which indicates the possibility of using this new process for...
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