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Adding more functions to a logic circuit requires new process modules in the standard CMOS technology. Solutions for different memory types and analog circuitry are reviewed and the compromise between technical performance and additional processing cost will be shown.
A new two-transistor memory cell concept for 16-Mbit DRAM and beyond is described. This cell offers the advantages of small cell size, non-destructive and fast operation of reading with a built-in amplifier, and the capability of storing multiple-valued or analog information.
We have used a new selective CVD TiSi2 in an advanced CMOS process. Subhalf-micron transistors have been characterised, with results equivalent to devices made with more conventional salicide. Ring oscillators with typical gate a delay times have been fabricated. Finally, fully functional 16K SRAMS and 350 KT ASICs have been fabricated, which indicates the possibility of using this new process for...
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