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Interdigitated microwave bipolar transistors with submicron dimensions have been manufactured to study the effects that occur when the emitter width is reduced to values well below one micron. The DC current gain normalized to the total emitter area shows an optimum as a function of emitter width for 0.5 ??m wide emitters. The sidewalls of the emitters contribute significantly to the measured reverse...
A review is given of our recently improved physical models for device simulators. They have been implemented in MEDICI and MINIMOS. Examples of actual MOS and Bipolar transistors as well as more exploratory transistor structures will be presented. The physical insight obtained from these device simulations is used in our compact transistor models. Their strength and large validity range will be illustrated.
We report for the first time an analysis of impact ionization phenomena occurring in a complementary charge injection transistor. We observed the real-space transfer of minority carriers generated by impact ionization and collected by the collector contact. From the measured collector current and by means of a simple model, we estimated the electron impact ionization coefficient of In0.53Ga0.47As...
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