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A quantitative analysis of the effects causing the maximum cutoff frequency reduction as horizontal device dimensions are downscaled is carried out. Simple analytical expressions describing the geometry dependence of the maximum cutoff frequency fT and forward transit time are derived, and verified with numerical simulations. These expressions suggest a simple method to extract the values of the maximum...
Using only a few numerical calculations, we give the analytical current-voltage and charge-voltage characteristics valid for any PBT. The highest unity current gain frequency (fT) corresponding to the current technology is on the order of 30 GHz ; nevertheless, the oscillation frequency can be higher than 100 GHz.
Based on device simulations an analytical DC-and AC-model for vertical DMOS transistors has been developed. It is based on a subcircuit approach. An enhanced MOS model for the channel and an adapted JFET model which accounts for drift velocity saturation in the drift region are used. As in existing approaches both the nonconstant doping in the channel region and the AC-behavior of the DMOS have not...
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