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This paper presents quantitative 2D stress dependent simulations of the Sealed Interface Local Oxidation (SILO) structure. In the SILO structure, the oxidation mask consists in a NitrideI/Oxide/Nitride II stack, in which the thin Nitride I layer is directly sealed on the silicon surface. A very thin oxide layer is considered between the silicon and the nitride-I layer in which the oxidant diffusivity...
The early stages of diffusion into crystalline Si from 170 nm thick CoSi2 layers doped with As and B have been studied by a high resolution delineation technique of dopant profiles. The junction shape follows the silicide-silicon interface for B while it is deeper near the grain boundary for As. The different behaviour is related to the different diffusion mechanisms of As and B in the silicide layer...
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