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BF implantation into polysilicon and its subsequent rapid thermal diffusion into single crystal silicon is investigated for the fabrication of shallow pnp polysilicon emitter bipolar transistors. The use of RTA, instead of furnace annealing, is shown to give shallower junctions, with a higher doping concentration at the polysilicon/silicon interface. The effect of fluorine, which is introduced into...
A new procedure is described to separate the minority carrier current through the monosilicon/interface/polysilicon structure according to the various mechanisms. These mechanisms are then related to various processing conditions for process optimization. For the first time a significant effect of the monosilicon doping on the interface recombination has been identified.
This paper reviews recent progress in high-speed Si/Si1-xGex heterojunction bipolar transistors. The values of fT and ECL gate delay achieved with these devices are described and compared with results for silicon homojunction bipolar transistors. The technological problems associated with the use of Si1-xGex are discussed, and device and circuit modelling results are presented which highlight the...
This paper describes the experimental extraction of the ratio of the minority carrier diffusion constant in strained p-type Si1-xGex to the value in Si at the same doping level. The extraction is based on the application of new insights in the effective density of states in strained Si1-xGex. It will be shown how different experimental observations suggest a strong reduction of the valence band density...
The growth of silicon dioxide in pure N2O has been evaluated by using conventional furnace oxidation method. The results have pointed out that neither lightly-doped nor heavily-doped substrates exhibit any self-limited growth behavior. The growth kinetics can be described by the linear-parabolic model. Enhanced oxidation has also been observed on heavily arsenic doped substrates in the pure N2O ambient.
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