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This paper discusses the low-frequency noise behaviour corresponding to Random Telegraph Signals in submicrometer Si MOSTs. It is shown that when the noise spectral density is measured as a function of the gate voltage (linear operation) or of the drain voltage, peak-shaped features are generally obtained. This excess-noise peak can be used to identify the occurrence of RTS, for instance in Silicon-on-Insulator...
With the purpose of determining material parameters of MOS-technology dedicated Shockley-Haynes-structures and MOS varactors, among others, have been integrated on a single chip. By use of a specially developed electronic unit an improved performance of the Shockley-Haynes-Experiment has been achieved. In this paper from the comparison of measurements and analytic simulations the hole mobility ??p...
Charge trapping and detrapping characteristics have been studied on thin Si3N4SiO2 stacked dielectric layers processed in an integrated vacuum system with separate modules for HF vapor etching, silicon thermal oxidation and Si3N4 low pressure chemical deposition. At low field, polarization effects are observed, together with residual conduction. A large current flows at higher fields (≫ 6MV.cm??1),...
We show that SAGM InGaAs/InP Avalanche Photodiodes, cooled at 200K, detect the arrival time of single photons with nanosecond resolution. Hole trapping at the heterointerface impairs the performance of presently available devices. However, a proper design of the structure for low temperature operation is expected to improve their timing performance well below the nanosecond limit.
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