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The Post-Stress period in n-channel MOSFET's is examined from the viewpoint of Post-Stress variation of the bulk gate oxide degradation features (oxide charge ??Qoxps and corresponding centroid xbps). Besides, we demonstrate that the discharging mechanism is not affected by the stress-induced degradation level, neither by the process-induced Hydrogen (H) concentration throughout the MOS structure...
Charge trapping and detrapping characteristics have been studied on thin Si3N4SiO2 stacked dielectric layers processed in an integrated vacuum system with separate modules for HF vapor etching, silicon thermal oxidation and Si3N4 low pressure chemical deposition. At low field, polarization effects are observed, together with residual conduction. A large current flows at higher fields (≫ 6MV.cm??1),...
An experimental field effect structure constructed without an insulating oxide layer is studied for use in high radiation total dose environments. Results are given for high frequency C-V curves carried out before and after a 50 KGy dose (5 Mrad [Si]) from a Co60 source.
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