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This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz fMAX. The technological optimization strategy is discussed and electrical characteristics are presented. A record peak fMAX of 423 GHz (fT = 273 GHz) is demonstrated in SiGe:C HBT technology.
An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAX value of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.
The most relevant techniques proposed in the literature for the extraction of the self-heating thermal resistance of bipolar transistors from measurements of their DC electrical characteristics are analyzed and compared for both GaAs HBTs and silicon BJTs. A simple procedure is presented to accurately evaluate the thermal resistance of silicon BJTs with non-negligible Early effect, for which traditional...
Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs...
Ultra-thin chip technology is identified as an enabler for overcoming bottlenecks in microelectronics, such as 3D integration, and for leading to new applications, such as hybrid, flexible system-in-foil (SiF). This, however, calls for new techniques in fabricating very thin wafers or chips, in applying them to device integration processes and in assembly and packaging. The application to SiF requires...
3D integration is a key solution to the predicted performance problems of future ICs as well as it offers extreme miniaturization and cost-effective fabrication of so-called more than Moore products as e.g. MEMS/IC systems. Through silicon via (TSV) technologies enable high interconnect performance at relatively high fabrication cost compared to 3D packaging. In general it is not only one 3D integration...
This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz push-push VCO with a static divide-by-64 chain, a 140-GHz amplitude modulator, a 140-GHz LO amplifier, a fundamental frequency mixer, a 140-GHz LNA, and a variable gain IF amplifier,...
Deep-silicon etching technique was used for achieving high-Q inductors in a 0.25 mum SiGe:C BiCMOS process. Low-resistive silicon regions under passive structures were removed using deep-silicon plasma etch technique. The lithography and etch of the silicon were performed from the backside of the wafer. Both thick (750 mum) and thin (370 mum) 8-inch wafers were processed without any handling and reliability...
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