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In summary, an improved process named SIMOX layer transfer is proposed. SOI wafer with the device layer thickness of 147.5plusmn3.1 nm has been fabricated with SLT process. SE result indicates that the device layer has excellent thickness uniformity. The results of TEM show sharp interfaces and defect-free device layer, revealing the perfect structure of SLT SOI.
The successful fabrication of hybrid SOI-GeOI wafers is reported. Process alternatives are documented by detailed characterizations. This co-integration achieves high hole mobility in Ge islands and high electron mobility in Si islands.
The challenges of device scaling and short channel effects have necessitated the close examination of 3 dimensional processing. While this certainly comes with challenges in processing and metrology, it also comes with opportunities for new device paradigms and analysis methods. We will look at an historical perspective of 3D processing and further examine how to accurately ldquothinkrdquo 3D to achieve...
In this work, we clarify the role of surface preparation on the buried channel properties. First, we demonstrate the efficiency of a forming gas anneal (FGA) to erase the difference between thin and thick films. Then, we investigate various combinations of surface treatments and their impact on the top surface and buried interface, separately.
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