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The mobility-thickness dependence in SOI films is clarified. Measurements in fully depleted SOI MOSFETs show that the low-field mobility at the front channel decreases by thinning the Si film or by sweeping the back gate from depletion into accumulation. We demonstrate that this mobility degradation is only apparent, being related to the potential value at the surface facing the channel. This opposite-surface...
In this work, we clarify the role of surface preparation on the buried channel properties. First, we demonstrate the efficiency of a forming gas anneal (FGA) to erase the difference between thin and thick films. Then, we investigate various combinations of surface treatments and their impact on the top surface and buried interface, separately.
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