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We have developed a fast and straightforward technique to fabricate suspended carbon nanotube field effect transistors (CNT FETs) using pristine as-grown carbon nanotubes (unexposed to photoresist or solvents). CNT thin films were first grown on a 500 nm thick thermally oxidised Si substrate by chemical vapor deposition (CVD) using ferritin encapsulated iron nanoparticles as the catalyst.The technique...
This paper presents a new germanium-silicon core-shell nanoparticle structure for nonvolatile memory applications. This core-shell can help to passivate Ge dots from oxidation, create more favorable interface between nanoparticle and high K dielectric materials and improve device performance.
In this paper we describe ZnO as n-type semiconductor (wide band gap stable inorganic), which has LUMO level at 4.4 eV (much closer to the work function of gold than typical organic semiconductor LUMO) and pentacene as p-type semiconductor (organic), whose HUMO level at 5.0 eV which is close to the gold work function (5.1 eV). ZnO films were prepared via a solution process. For this, we used zinc...
This paper demonstrates Al2O3 as gate dielectric with embedded Ag-NCs to synchronize the individual advantages offered by metal-NCs and high-k dielectric materials. Simultaneous achievement of enhanced programming speed and longer data retention has been a challenge in designing floating gate based memory devices. Replacement of SiO2 by other materials with higher dielectric constants as gate dielectric...
In this work, electrical characteristics of two types MOS memory structures: one that contains platinum and one that contains gold nanoparticles, embedded between two dielectric layers, a thin "tunneling" SiO2 and a thicker HfO2 "control" layer has been compared. The nanoparticles are formed during simple electron-gun deposition of a very small quantity of platinum or gold, at...
The electrical properties of Al/ZnO-nanocomposite/pSi n-p heterojunction diodes and optical properties of ZnO nanostructures on (100)Si substrates in polystyrene-acrylic acid diblock copolymers, are reported.
This paper reports a recent switch design that produces milliwatt average power level into free space when pumped by a modest fiber mode-locked laser at ~780 nm. The present PC switch design is based on ultrafast epitaxial GaAs with embedded ErAs nanoparticles grown by molecular beam epitaxy at standard temperatures (>500 degC). The ErAs nanoparticles play a similar role to the arsenic precipitates...
The nanoparticles (NPs) have been widely used to supersede the conventional charge trapping layers (CTLs) of the silicon-oxide-nitride-oxide-silicon devices for reducing the charge loss due to a local leakage path. Moreover, to reduce the gate tunneling leakage current, the high-dielectric-constant (high-k) gate oxides with the identical equivalent-oxide thickness (EOT) are promising for the advanced...
In this paper, we demonstrate three-dimensional assembly of nanoscale materials, including single-walled and multi-walled carbon nanotubes and Au nanoparticles on a flexible parylene-C substrate. The assembly technology combines top down fabrication (fabrication of the three-dimensional microplatform) and bottom up dielectrophoretic (DEP) assembly of different nanomaterials.
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