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Summary form only given. Silicon carbide is a wide bandgap semiconductor whose intrinsic properties make it suited for high-power, high-temperature, and high frequency applications. Additionally, SiC has potential for the fabrication of metal-oxide-semiconductor (MOS) power supplies because it forms a native oxide in the same manner as silicon. The structure of the interface between the native oxide...
In conclusion we have observed dramatic change in the band structure of SiNW which prove exploitable in many silicon based optical and mechanical sensors and devices. The transition from indirect to direct region proves that a transparent NW can be converted to an absorptive one. Stress induced by temperature and/or lattice mismatch (e.g. Si/Ge epitaxial layers) can be the basis for myriad of sensor...
It is well understood that the two-fold energy degeneracy for spin-up and spin-down electrons regarding two dimensional electrons gas (2DEG) confined within a semiconductor heterostructure can be removed at zero magnetic fields (Bychkov, 1984). The splitting from the structure inversion asymmetry is described by the so-called Rashba term, HR = plusmnalphak, where k is the wave vector and the coefficient...
The aim of this paper is to study, the NH3 plasma technique to improve the charge programming speed and retention time for the SiO2/SixGe1-x/SiO2 tri-layer memory devices. The modulated tunnel oxide energy band gap near SixGe1-x/TO interface is suitable for enhancing the programming and charge retention performance.
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