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Both p+ and n+ ultra-shallow junctions (USJ) <10 nm deep have been realized by using <200 eV equivalent boron energy (<890 eV BF2 or <4 keV B18H22) or <1 keV equivalent arsenic energy (<500 eV P or <1.7 keV Sb) implants in combination with diffusion- less high temperature msec annealing and diffusion-less low temperature spike annealing thereby also reducing device micro-variation...
For the 32 nm node, using msec only dopant activation techniques reveal the potential for serious device variation caused by both single wafer high current implanter design and msec annealing micro-uniformity variation effects. New non-contact metrology techniques with <1mm detection resolution such as RsL (electrical Rs and leakage) and TW (thermal wave dose and damage detection) are required...
Millisecond annealing either by flash lamp or laser appears to be the leading approach to meet the needs of ultra-shallow junction annealing and polysilicon activation for advanced technology nodes. There are many advantages to this technology including high electrical activation, excellent lateral abruptness, controlled and limited dopant diffusion and the ability to engineer the extended defects...
An accurate method to measure the four point probe (4PP) sheet resistance (R S ) of ultra shallow junction (USJ) Source–Drain Extension structures is described. The method utilizes Elastic Material probes (EM-probes) to form non-penetrating contacts to the silicon surface [R.J. Hillard, P.Y. Hung, William Chism, C. Win Ye, W.H. Howland, L.C. Tan, C.E. Kalnas, Characterization and Metrology...
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