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We will discuss ultralow threshold photonic crystal nanocavity lasers with quantum dots and efficient light emission from silicon photonic crystal nanocavities. Prospects for their applications to future optical sensing applications will also be discussed.
We demonstrate the use of 193 nm optical lithography for fabricating nanophotonic wire structures on silicon-on-insulator (SOI) technology. We present fabrication and measurement result on wire devices. We report a propagation loss of 2.8 dB/cm for 450times220 nm photonic wire.
This study demonstrates the design, fabrication, and characterization of a sensing platform based on the on-chip integration of such silicon-based microdisk resonators (with ultra high Q > 106) with microfluidic channels for sample delivery. Tuning of the resonance features using fluid in upper-cladding as well as applications in lab-on-a-chip sensing are reported.
There is an increasing and largely unfulfilled need for nanometer-scale photonic components, both passive and active, in intra-chip optical communications and other high-speed, ultra-low- power photonic applications. Silicon-based components are favored because they are capable of on-chip-network integration with CMOS electronics. This paper presents a detailed analysis of radiative waveguide bend...
In summary, epitaxial Ge1-xSnx films with hole mobilities as high as 600 cm2V-1s-1 were deposited on Si(100) substrates by UHV-CVD and used to fabricate photoconductor devices employing standard semiconductor processing steps. Performance measurements of the produced device provided feedback for improvement of the Ge1-xSnx material quality during the growth. Photoconductor devices showed maximum 0...
An InGaAs pin-diode has been grown on (001) Si- substrate overcoming the lattice mismatch by introducing an III/V-quasi-buffer. The device high speed performance is demonstrated by BER measurements up to 10 Gbit/s.
Ultra-high Q microdisk resonators are fabricated and demonstrated on silicon-on-insulator platform. The presence of oxide substrate and a thin Si pedestal layer dramatically reduce the thermal resistance, thereby, increasing input optical power threshold for thermal instability. Critical coupling for a <2~2times106 is experimentally observed.
Mesoporus silica dielectrics, which revealed low refractive index (n~1.27), were introduced together with Si3N4 layers to be double-layer-based graded-refractive-index ant-reflectors for silicon solar-cells. Enhanced solar-light transmission increased conversion efficiency of Si solar panels by 2%.
We described design and fabrication of the light source, and demonstrated sevenfold photoluminescence (PL) enhancement from a single cavity. In this approach, photonic crystal cavities are used to enhance PL by increasing spontaneous emission rate from Si nanoparticles due to the Purcell effect, and by increasing collection efficiency. Here we report our results on the measured photoluminescence decay...
beta-FeSi2 precipitates, with a band gap of ~0.8 eV, are formed by ion implantation into a silicon-on-insulator rib waveguide. A linear photocurrent of 1 muA was obtained from a p+-i-n+ structure under 3.16 mW incident power at 1550 nm.
The transient lattice deformation of laser-shocked silicon single crystal was studied by picosecond time-resolved X-ray diffraction with laser plasma X-rays. The shock-recovered samples were evaluated by reciprocal space mapping.
The principle of silicon photomultipliers (SiPM) is discussed. The SiPM structure is based on the array of submicron semiconductor micro-cells, working in breakdown mode with integrated quenching elements and common electrode. The characteristics and the operational conditions of the SiPM is presented.
We demonstrate error-free propagation of wavelength-parallel 160-Gb/s optical data in a broadband silicon microring resonator-based comb switch, and observe no power penalty increase associated with inter-channel crosstalk when scaling from one to 16 wavelength channels.
Quantum mechanical Langevin calculations show nonlinear absorption significantly degrades the noise figure of silicon Raman amplifiers, and lifetimes in the 20 ps range or less are needed to approach the theoretical limit of 3 dB noise figure.
We experimentally demonstrate electrooptic modulation in silicon at 18 Gbps (NRZ) in a micro-ring of 12 micron diameter using a pre-emphasis technique. Device simulations indicate that this technique can extend the bit rate to 40 Gbps.
The flat and light-weighted micromirror is realized using the tense poly-Si membrane across a rigid c-Si drum. The tensile stress of ~600 MPa is obtained using the crystallization of a-Si. The yield ratio depends on the design. The membrane profile is found to depend on the process sequence relating to the timing of the crystallization. The mirror satisfies the optical flatness <lambda/10 for the...
We present experimental and theoretical analysis for thermal impedance (ZT) in a hybrid silicon evanescent laser. For an 850 mum long Fabry-Perot, we observe ZT of 41.8degC/W experimentally and 43.5degC/W theoretically, which is in excellent agreement.
Thin film InGaAs/GaAsP lasers with strained single quantum well active regions have been bonded to Si and tested. The thin film laser structure was designed and grown with no net strain using strain compensation.
This talk discusses the technological challenges arising from the insertion of a Ge photodetectors step in a CMOS process and the advantages brought by monolithic integration.
An optical gate was fabricated with silicon, liquid crystal, and a polarizer. Photons excited free carriers in silicon, which triggered voltage application to the cell. Consequently, optical signals opened or closed their path by themselves.
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