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We will discuss ultralow threshold photonic crystal nanocavity lasers with quantum dots and efficient light emission from silicon photonic crystal nanocavities. Prospects for their applications to future optical sensing applications will also be discussed.
We demonstrate the use of 193 nm optical lithography for fabricating nanophotonic wire structures on silicon-on-insulator (SOI) technology. We present fabrication and measurement result on wire devices. We report a propagation loss of 2.8 dB/cm for 450times220 nm photonic wire.
There is an increasing and largely unfulfilled need for nanometer-scale photonic components, both passive and active, in intra-chip optical communications and other high-speed, ultra-low- power photonic applications. Silicon-based components are favored because they are capable of on-chip-network integration with CMOS electronics. This paper presents a detailed analysis of radiative waveguide bend...
We described design and fabrication of the light source, and demonstrated sevenfold photoluminescence (PL) enhancement from a single cavity. In this approach, photonic crystal cavities are used to enhance PL by increasing spontaneous emission rate from Si nanoparticles due to the Purcell effect, and by increasing collection efficiency. Here we report our results on the measured photoluminescence decay...
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