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This paper presents the results of elaboration of 0.8-2.5 GHz SiC-based amplifiers with output power 10 & 20 W at 1 dB gain compression, as well as efficient nonlinear model of CRF24010 (Cree Inc.) transistor, simulation results, design and experimental characteristics of two amplifier chains (single-ended and balanced). Both amplifiers have ultra-small sizes (4.8 and 9.6 cm2) and good electric...
An opportunity of gain increase and transistor chip miniaturizing is considered using cascode circuit. Two-stage cascode circuit results in extra 3 dB small-signal gain. The considered design of powerful microwave FETs will allow reducing the area of transistor chip and dimensions of the hybrid amplifier as a whole
Two UHF Class E power amplifiers were designed, simulated, and fabricated with operating frequencies 800 MHz and 1035 MHz, respectively. The high efficiency DC-AC power conversion in power amplifier (PA) was obtained using class E mode operation
A new microwave configuration of class E amplifier with series switch inductance is presented. Approximate maximum frequency of class E operation amplifier and its load network impedance are determined. The method of input and output transmission-lines amplifier design is also presented. The method is proved in order to satisfy experience with good accuracy
In this paper, the results of design and manufacture of middle power X-band AlGaN/GaN HEMT are presented. It has Gain=11 dB, POUT =1.4 W/mm at F=10 GHz
This paper presents the results of design and manufacture of low noise AlGaN/GaN HEMT for L-band. It has NFmin<1.4 dB gain>15 dB at F=1.5 GHz. GaN HEMT has been designed and manufactured in SRI "Pulsar"
This paper presents the design and results of practical implementation of two X-band MMIC low noise amplifiers. Design and manufacturing techniques are considered. Experimental characteristics are shown
In this paper three types of discrete steering circuits: 1times2 switcher for 1-18 GHz; 5-bit attenuator with 0.5 dB discrete for 1-18 GHz; 6-bit phase-shifter with 5.625deg discrete for 8-12 GHz are presented. Design and basic fabrication techniques are considered. Results of microwave parameters measurement are given
The results of the development of the wideband two-stage power amplifier (PA), covering 8-18 GHz frequency band with the saturated output power of 0.74-1.1 W and the gain of 6.9-8.6 dB, are presented. PA is realized with "the chip-on-the chip" (quasimonolithic) technology application. The PA and balanced PA (BPA) output characteristics are demonstrated
A circuit design of engineering of with GaAs MMIC SPDT switch with integrated driver based on metal-semiconductor field-effect transistors (MESFETs) is presented. The distinctive feature of the presented circuit design of the driver is operated with a single power supply, so due to this consumption current (thermal scattering power) is reduced and operate reliability is increased the circuit analysis...
This paper presents the description of GaAs MMIC PIN diodes switch design. The process included experimental part of pin diodes parameters determination. Epitaxial wafers substance was produced using VPE
An enhancement/depletion 0.35-mum recessed-gate GaAs MESFET process based on selective wet etching using Al1-xGax As etch-stop layers is presented. The technology proposed provides precise control of channel etching depth and demonstrates high uniformity of device characteristics
3 GHz broadband microwave monolithic variable attenuator with dimensions 0.7times0.9times0.125 mm3 has been developed. VSWR better than 1.3, 1.5-2.5 dB insertion loss and 2.0 dB bandpass flatness have been obtained
In this paper the design and performance of an integrated circuit for broadband 5-bit monolithic microwave (MMIC) digital attenuators are presented. Extensive electromagnetic simulation and compact circuit design techniques have been applied in order to yield MMIC with 2.1times1.6times0.125 mm3 dimensions. MESFET have been used as key elements. Performance of the digital attenuator measured at 6-12...
In this paper the design and performance of an integrated circuit for broadband 4-bit monolithic microwave (MMIC) digital attenuators are presented. Extensive electromagnetic simulation and compact circuit design techniques have been applied in order to yield MMIC with 4times2times0,125 mm3 dimensions. MESFET have been used as key elements. Performance of the digital attenuator measured at 6divide12...
A CAD tool, GENESYN is presented that allows the synthesis of lumped-element matching networks based on genetic algorithm (GA). Due to overall control over network configuration and element values, it generates practical and convenient networks. An example of designing interstage matching network for microwave transistor amplifier is demonstrated
The design of 1.5-2.5 GHz MMIC amplifier is presented using a new interactive "visual" technique. In this paper, we demonstrate the design of MMIC low-noise amplifier (LNA) using a new interactive "visual" technique. The design technique allows the exact synthesis of compensation/feedback networks directly from simultaneous set of performance specifications, including the gain,...
In this paper are the results of simulation of matching networks for power MESFET's are presented. The technique of modeling is based on substitution of coupled microstrip by equivalent single microstrip placed inside magnet field webs. The designated power MESFET has L-C-L type matching networks. The lumped capacitors were realized as parallel plate capacitors on 0.3 mm thick ceramic substrates,...
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