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16+ low-noise optical comb lines with 80 GHz spacing and 0 dBm/line output power are generated by a single InAs/GaAs quantum dot (QD) Fabry-Perot laser. Electrical power consumption is reduced dramatically down to 6 mW/line.
An enhancement/depletion 0.35-mum recessed-gate GaAs MESFET process based on selective wet etching using Al1-xGax As etch-stop layers is presented. The technology proposed provides precise control of channel etching depth and demonstrates high uniformity of device characteristics
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