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An enhancement/depletion 0.35-mum recessed-gate GaAs MESFET process based on selective wet etching using Al1-xGax As etch-stop layers is presented. The technology proposed provides precise control of channel etching depth and demonstrates high uniformity of device characteristics
Techniques that allow the elements present in the air to be determined in a simple and rapid manner are very attractive. Direct aerosol sampling techniques avoid the need to pretreat the filter via wet digestion in order to remove any sources of contamination, and they decrease the precipitation time significantly. Analyzers based on this technique can also determine the concentrations of elements...
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