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A circuit design of engineering of with GaAs MMIC SPDT switch with integrated driver based on metal-semiconductor field-effect transistors (MESFETs) is presented. The distinctive feature of the presented circuit design of the driver is operated with a single power supply, so due to this consumption current (thermal scattering power) is reduced and operate reliability is increased the circuit analysis...
An enhancement/depletion 0.35-mum recessed-gate GaAs MESFET process based on selective wet etching using Al1-xGax As etch-stop layers is presented. The technology proposed provides precise control of channel etching depth and demonstrates high uniformity of device characteristics
In this paper the design and performance of an integrated circuit for broadband 5-bit monolithic microwave (MMIC) digital attenuators are presented. Extensive electromagnetic simulation and compact circuit design techniques have been applied in order to yield MMIC with 2.1times1.6times0.125 mm3 dimensions. MESFET have been used as key elements. Performance of the digital attenuator measured at 6-12...
In this paper the design and performance of an integrated circuit for broadband 4-bit monolithic microwave (MMIC) digital attenuators are presented. Extensive electromagnetic simulation and compact circuit design techniques have been applied in order to yield MMIC with 4times2times0,125 mm3 dimensions. MESFET have been used as key elements. Performance of the digital attenuator measured at 6divide12...
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