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A multitime programmable memory cell with improved MOS capacitor is proposed in this paper. The improved MOS capacitor has p-type junction near the channel, which prevents the capacitor from deep depletion, and this helps to improve the cell’s program/erase efficiency and stability. A test chip is fabricated using a 0.13-$\mu \text{m}$ standard CMOS process without any extra masks or process modification...
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