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We have assessed the use of commercial silicon-on-sapphire CMOS electronics in control circuits, which could be used to interface with quantum bits at low temperatures. We have characterized n-type MOSFETs, p-type MOSFETs, and an n+-diffusion resistor at 300 K and 4.2 K and extended these studies into the millikelvin regime. Our measurements of dc responses at 300 K, 4.2 K, and subkelvin and transient...
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