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Direct measurements of self-heating in gallium nitride (GaN) transistor using ultraviolet (UV) and visible micro-Raman spectroscopy are reported. The material stack was grown on silicon substrates and consists of an AlN nucleation, AlGaN transition, GaN buffer, and AlGaN barrier layers. Phonon shifts are used to estimate the temperature rise. UV measurements probe the current-carrying 2-D electron...
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