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In this brief, we present a new silicon-on-insulator MESFET by using an SiGe region as a well for absorbing the holes which are generated in result of the impact ionization mechanism. The key idea in this brief is to improve the breakdown voltage and self-heating effect (SHE) by utilizing an SiGe region to decreasing the crowding of holes around the source. The well is located in the buried oxide...
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