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In this paper, we present the results of a combined measurement/simulation analysis of the degradation induced by on-state stress in Au-free AlGaN/gallium-nitride-on-Si Schottky barrier diodes (SBDs). Turn-on voltage ($V_{\mathrm{ TON}}$ ) and on-resistance ($R_{\mathrm{\scriptscriptstyle ON}}$ ) are affected by charge carrier trapping/detrapping, occurring in different regions and caused by different...
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