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Dependence of threshold voltage ($V_{\mathrm{ Th}}$ ) on oxide thickness ($t_{\mathrm{ ox}}$ ) for GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) using sputter-deposited Al2O3 as gate dielectric is studied in detail. Different III-nitride (III-N) heterostructures (AlGaN/GaN and AlInN/GaN) with/without GaN cap layer were used for fabricating these MIS devices...
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