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Threshold voltage shift ($\Delta {\text V}_{\text T}$ ) due to negative-bias temperature instability (NBTI) in p-FinFETs with replacement metal gate-based high-k metal gate process is measured using an ultrafast method. A comprehensive modeling framework involving uncorrelated contributions from the generation of interface traps ($\Delta {\text V}_{\text {IT}}$ ), hole trapping in preexisting (...
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