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During the evolution of dielectric breakdown (BD) in MOSFETs, the substantial localized temperatures (which could exceed the silicon melting point) in the vicinity of the BD spot may cause dopants at the source/drain (S/D) to be redistributed (IEDM Tech. Dig., p. 717, 2004; IEEE Proc. IPFA, p. 131, 2005). The preliminary study of dopant redistribution based on the diode current-voltage (I-V) characteristics...
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