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The high peak mobility of 509 cm2/$\text {V}\cdot \text {s}$ of the chemical vapor deposition -grown GeSn pMOSFETs is obtained using 1-nm Ge cap. The Ge cap on GeSn can reduce the scattering of oxide/interface charges and surface roughness for the holes in the GeSn quantum wells. However, the thick cap induces holes in the Ge cap itself, leading lower mobility than GeSn channels. The on current...
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