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We report the ultimate performance of a double-gate ultrathin body (DG-UTB) FET employing materials from group IV, III-V, and 2-D materials based on International Technology Roadmap for Semiconductors (ITRS) projected specifications for high-performance (HP) and low-power (LP) technologies. The band structures of the channel materials were obtained using the sp$^{3}\text{d}^{5}\text{s}^{\ast }$ ...
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