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We report on the high performance and high stability of thin-film transistors (TFTs) using solution-processed Zr–In–Zn–O (ZIZO) as an active layer. The effects of adding Zr to In–Zn–O, particularly the electrical characteristics of their thin films and TFTs, were systematically investigated. The Zr effectively controlled the oxygen vacancies because of its low standard electrode potential, which was...
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