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The impact of AlGaAs and AlAs buffer layers on the electrical properties of an epitaxial gallium–arsenide (epi-GaAs) metal–oxide–semiconductor capacitor (MOSC) was investigated. MOSC was fabricated by using atomic-layer-deposited – (TiAlO) alloy gate dielectric and epi-GaAs layers. The epi-GaAs layer was grown on Ge substrates at 675 with and...
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