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This paper describes InP/InGaAs double heterojunction bipolar transistor (HBT) technology that uses SiN/SiO2 sidewall spacers. This technology enables the formation of ledge passivation and narrow base metals by i-line lithography. With this process, HBTs with various emitter sizes and emitter-base (EB) spacings can be fabricated on the same wafer. The impact of the emitter size and EB spacing on...
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