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This paper analyzes and models the narrow width effect (NWE) observed in nMOS transistors fabricated using a 28-nm gate-first CMOS process. It is shown that the threshold voltage of nMOS transistors increases with decrease in channel width and this effect is enhanced at shorter gate lengths, thicker hafnium oxide (HfO2), and thicker lanthanum (La) capping layer. It is also observed that this increase...
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