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A novel Silicon-on-Insulator laterally double-diffused metal-oxide-semiconductor transistor with ultralow specific ON-resistance ($R_{\mathrm{{\scriptscriptstyle ON}},{\mathrm{ sp}}})$ is proposed, and its analytical model for the breakdown voltage (BV) is presented. The device features a variable-${k}$ dielectric trench and a p-pillar beside the trench (VK-P). First, the VK trench induces additional...
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