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Two types of 4H-silicon carbide (SiC) MOSFETs are proposed in this paper. One is the novel designed V-groove trench MOSFET that utilizes the 4H-SiC (0-33-8) face for the channel region. The MOS interface using this face shows the extremely low interface state density (<italic/>${D}_{\mathrm {\mathbf {it}}}$ ) of $3\times 10^{11}$ $\mathrm{cm}^{-2}~\mathrm{eV}^{-1}$ , which causes the high...
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